Invention Grant
- Patent Title: Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the same
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Application No.: US15856256Application Date: 2017-12-28
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Publication No.: US10388859B2Publication Date: 2019-08-20
- Inventor: Dae-Shik Kim , Jeong-Heon Park , Gwan-Hyeob Koh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2017-0065113 20170526
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L27/22 ; H01L43/02 ; H01L29/417
Abstract:
In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.
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