Systems and methods for reducing leakage currents through unselected memory cells of a memory array including setting an adjustable resistance bit line structure connected to the unselected memory cells into a high resistance state or a non-conducting state during a memory operation are described. The adjustable resistance bit line structure may comprise a bit line structure in which the resistance of an intrinsic (or near intrinsic) polysilicon portion of the bit line structure may be adjusted via an application of a voltage to a select gate portion of the bit line structure that is electrically isolated from the intrinsic polysilicon portion (e.g., via an oxide layer between the intrinsic polysilicon portion and the select gate portion). The memory cells may comprise a first conductive metal oxide (e.g., titanium oxide) that abuts a second conductive metal oxide (e.g., aluminum oxide) that abuts a layer of amorphous silicon.