Invention Grant
- Patent Title: Memory device with shared amplifier circuitry
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Application No.: US14496984Application Date: 2014-09-25
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Publication No.: US10395699B2Publication Date: 2019-08-27
- Inventor: Syed M. Alam , Thomas Andre
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/06 ; G11C5/06

Abstract:
In some examples, a memory device may have at least a first and a second memory array. In some cases, a portion of the bit cells of the first memory array may be coupled to first PMOS-follower circuitry and to second PMOS-follower circuitry. A portion of the bit cells of the second memory array may also be coupled to the second PMOS-follower circuitry and to third PMOS-follower circuitry. Additionally, in some cases, the portions of bit cells of both the first memory array and the second memory array may be coupled to shared preamplifier circuitry.
Public/Granted literature
- US20160093341A1 MEMORY DEVICE WITH SHARED AMPLIFIER CIRCUITRY Public/Granted day:2016-03-31
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