- 专利标题： Etching device, substrate processing apparatus, etching method and substrate processing method
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申请号： US15696611申请日： 2017-09-06
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公开(公告)号： US10395942B2公开(公告)日： 2019-08-27
- 发明人: Masahiko Harumoto , Koji Kaneyama , Yuji Tanaka , Masaya Asai
- 申请人： SCREEN Holdings Co., Ltd.
- 申请人地址： JP
- 专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Ostrolenk Faber LLP
- 优先权： JP2016-180856 20160915
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/02 ; H01L21/67 ; H01L21/687
摘要：
During a first period, pure water used as a low-volatile liquid is supplied onto a substrate while the substrate is rotated. After discharge of the low-volatile liquid is stopped, the low-volatile liquid remains in a large region on a DSA film. The low-volatile liquid is held on the DSA film without reacting with the DSA film. During a subsequent second period, an organic solvent is supplied to the substrate while the substrate is rotated. The organic solvent supplied to the substrate is mixed with the low-volatile liquid remaining on the DSA film. In this case, volatilization of the organic solvent is inhibited on the DSA film.
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