Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15759211Application Date: 2015-10-15
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Publication No.: US10396044B2Publication Date: 2019-08-27
- Inventor: Kazuyuki Nakagawa , Keita Tsuchiya , Yoshiaki Sato , Shinji Baba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- International Application: PCT/JP2015/079179 WO 20151015
- International Announcement: WO2017/064791 WO 20170420
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/64 ; H01L23/12 ; H01L25/00 ; H05K3/46 ; H01L21/48 ; H01L21/66 ; H01L23/16 ; H01L23/367 ; H01L23/498 ; H01L23/00 ; H01G4/38 ; H01G4/40 ; H05K1/02 ; H05K1/18 ; H01L23/36 ; H01L23/50 ; H01G2/06 ; G01R31/28

Abstract:
A semiconductor device includes a wiring substrate including a first surface and a second surface opposite to the first surface, a semiconductor chip including a plurality of chip electrodes and mounted over the wiring substrate, a first capacitor arranged at a position overlapping with the semiconductor chip in plan view and incorporated in the wiring substrate, and a second capacitor arranged between the first capacitor and a peripheral portion of the wiring substrate in plan view. Also, the second capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from the semiconductor chip.
Public/Granted literature
- US20180254252A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-09-06
Information query
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