Invention Grant
- Patent Title: Device for measuring integrated circuit current and method of measuring integrated circuit current using the device
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Application No.: US14174375Application Date: 2014-02-06
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Publication No.: US10401397B2Publication Date: 2019-09-03
- Inventor: Sang-Ho Lim , Sang-Ho Lee , Chea-Ok Ko , Jong-Wan Shim , Jeong-Nam Cheon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-si
- Agency: Jefferson IP Law, LLP
- Priority: KR10-2013-0013673 20130207
- Main IPC: G01R19/00
- IPC: G01R19/00 ; G06F17/14

Abstract:
A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.
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