公开(公告)号：US10401397B2

公开(公告)日：2019-09-03

申请号：US14174375

申请日：2014-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Ho Lim ,  Sang-Ho Lee ,  Chea-Ok Ko ,  Jong-Wan Shim ,  Jeong-Nam Cheon

IPC: G01R19/00 ,  G06F17/14

Abstract: A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.