A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.