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    Semiconductor memory device
    1.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10483456B2

    公开(公告)日：2019-11-19

    申请号：US16191727

    申请日：2018-11-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Hwan Park ,  Whankyun Kim ,  Keewon Kim ,  Youngman Jang

    IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12

    Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

    MAGNETIC MEMORY DEVICE
    2.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20190013462A1

    公开(公告)日：2019-01-10

    申请号：US16114964

    申请日：2018-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Chul Lee ,  Ki Woong Kim ,  Sang Hwan Park ,  Sechung Oh

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/12 ,  H01F10/32 ,  H01F10/12 ,  H01L43/10

    CPC classification number: H01L43/08 ,  H01F10/12 ,  H01F10/3204 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

    Memory devices and methods of manufacturing the same
    3.
    发明授权
    Memory devices and methods of manufacturing the same 有权
    存储器件及其制造方法

    公开(公告)号：US09184376B2

    公开(公告)日：2015-11-10

    申请号：US14315610

    申请日：2014-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Hwan Park ,  Soonoh Park ,  Sangyong Kim ,  Joonmyoung Lee

    IPC: H01L43/10 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/08

    Abstract: A magnetic memory device may include a substrate and a magnetic tunnel junction memory element on the substrate. The magnetic tunnel junction memory element may include a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer. The reference magnetic layer may include a first pinned layer, an exchange coupling layer, and a second pinned layer. The exchange coupling layer may be between the first and second pinned layers, and the second pinned layer may include a ferromagnetic layer and a non-magnetic layer. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the tunnel barrier layer may be between the reference magnetic layer and the free magnetic layer.

    Abstract translation: 磁存储器件可以在衬底上包括衬底和磁性隧道结存储元件。 磁性隧道结存储元件可以包括参考磁性层，隧道势垒层和自由磁性层。 参考磁性层可以包括第一固定层，交换耦合层和第二固定层。 交换耦合层可以在第一和第二被钉扎层之间，并且第二被钉扎层可以包括铁磁层和非磁性层。 第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且隧道势垒层可以在参考磁性层和自由磁性层之间。

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US09825216B2

    公开(公告)日：2017-11-21

    申请号：US15244498

    申请日：2016-08-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Hwan Park ,  Whankyun Kim ,  Keewon Kim ,  Youngman Jang

    IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10153422B2

    公开(公告)日：2018-12-11

    申请号：US15814588

    申请日：2017-11-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Hwan Park ,  Whankyun Kim ,  Keewon Kim ,  Youngman Jang

    IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12

    Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

    Variable resistance memory device
    7.
    发明授权
    Variable resistance memory device 有权

    公开(公告)号：US11706931B2

    公开(公告)日：2023-07-18

    申请号：US17230029

    申请日：2021-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Hoon Kim ,  Sang Hwan Park ,  Yong-Sung Park ,  Hyeonwoo Seo ,  Se Chung Oh ,  Hyun Cho

    IPC: H10B61/00 ,  H10B63/00

    CPC classification number: H10B61/22 ,  H10B63/34 ,  H10B63/845

    Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

    MAGNETIC MEMORY DEVICE
    9.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20210020829A1

    公开(公告)日：2021-01-21

    申请号：US16803051

    申请日：2020-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Hwan Park ,  Jae Hoon Kim ,  Younghyun Kim

    IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22

    Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.

    Magnetic memory device
    10.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US10403812B2

    公开(公告)日：2019-09-03

    申请号：US16114964

    申请日：2018-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Chul Lee ,  Ki Woong Kim ,  Sang Hwan Park ,  Sechung Oh

    IPC: H01L21/00 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F10/12 ,  H01L27/22

    Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

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