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公开(公告)号：US20210050383A1
公开(公告)日：2021-02-18
申请号：US16884769
申请日：2020-05-27
发明人： Ung Hwan Pi , Sung Chul Lee , Jangeun Lee
摘要： A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.
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公开(公告)号：US20210050044A1
公开(公告)日：2021-02-18
申请号：US16828429
申请日：2020-03-24
发明人： Sung Chul Lee , Ung Hwan Pi
摘要： A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
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公开(公告)号：US20190140163A1
公开(公告)日：2019-05-09
申请号：US16021708
申请日：2018-06-28
发明人： Sangjun Yun , Sang-Kuk Kim , Jae Hoon Kim , Eunsun Noh , Se Chung Oh , Sung Chul Lee , Daeeun Jeong
摘要： Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.
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公开(公告)号：US11730064B2
公开(公告)日：2023-08-15
申请号：US16950009
申请日：2020-11-17
发明人： Sung Chul Lee , Whankyun Kim , Joonmyoung Lee , Junho Jeong
CPC分类号： H10N52/80 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H10B61/22 , H10N52/00 , H10N52/01
摘要： A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.
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公开(公告)号：US11456332B2
公开(公告)日：2022-09-27
申请号：US16884769
申请日：2020-05-27
发明人： Ung Hwan Pi , Sung Chul Lee , Jangeun Lee
摘要： A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.
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公开(公告)号：US11205679B2
公开(公告)日：2021-12-21
申请号：US16794845
申请日：2020-02-19
发明人： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
摘要： A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
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公开(公告)号：US11588100B2
公开(公告)日：2023-02-21
申请号：US17401620
申请日：2021-08-13
发明人： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
摘要： A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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公开(公告)号：US20220262419A1
公开(公告)日：2022-08-18
申请号：US17735931
申请日：2022-05-03
发明人： Sung Chul Lee , Ung Hwan Pi
摘要： A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
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公开(公告)号：US20220216266A1
公开(公告)日：2022-07-07
申请号：US17483156
申请日：2021-09-23
发明人： Ung Hwan Pi , Sung Chul Lee
摘要： A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.
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公开(公告)号：US12096639B2
公开(公告)日：2024-09-17
申请号：US17483156
申请日：2021-09-23
发明人： Ung Hwan Pi , Sung Chul Lee
CPC分类号： H10B61/22 , G11C11/161 , H10N50/80 , G11C11/165 , H10N50/85
摘要： A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.
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