Invention Grant
- Patent Title: Multi-component conductive structures for semiconductor devices
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Application No.: US15692779Application Date: 2017-08-31
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Publication No.: US10411017B2Publication Date: 2019-09-10
- Inventor: Eric Blomiley , Fatma Arzum Simsek-Ege
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; C23C16/06 ; H01L27/108 ; H01L29/49 ; C23C16/455 ; H01L21/768 ; H01L21/285
Abstract:
Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.
Public/Granted literature
- US20190067295A1 MULTI-COMPONENT CONDUCTIVE STRUCTURES FOR SEMICONDUCTOR DEVICES Public/Granted day:2019-02-28
Information query
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