- Patent Title: Structure and formation method of semiconductor device structure
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Application No.: US14818965Application Date: 2015-08-05
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Publication No.: US10411113B2Publication Date: 2019-09-10
- Inventor: Po-Chi Wu , Chai-Wei Chang , Kuo-Hui Chang , Yi-Cheng Chao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.
Public/Granted literature
- US20160343827A1 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2016-11-24
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