公开(公告)号：US20240274691A1

公开(公告)日：2024-08-15

申请号：US18651757

申请日：2024-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/66553 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/4966

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US20220359726A1

公开(公告)日：2022-11-10

申请号：US17872562

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC: H01L29/66 ,  H01L29/78

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US10411113B2

公开(公告)日：2019-09-10

申请号：US14818965

申请日：2015-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/78

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US12002872B2

公开(公告)日：2024-06-04

申请号：US17872562

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/66553 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/4966

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US10573573B2

公开(公告)日：2020-02-25

申请号：US15925790

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC: H01L23/31 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11 ,  H01L21/56 ,  H01L23/00 ,  H01L25/075

Abstract: A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US20190295913A1

公开(公告)日：2019-09-26

申请号：US15925790

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.