Invention Grant
- Patent Title: Methods for phase-change memory array
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Application No.: US16253087Application Date: 2019-01-21
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Publication No.: US10416909B2Publication Date: 2019-09-17
- Inventor: Ferdinando Bedeschi , Claudio Resta , Marco Ferraro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F3/06
- IPC: G06F3/06 ; H01L45/00 ; G11C13/00 ; G11C13/02

Abstract:
Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.
Public/Granted literature
- US20190155528A1 METHODS FOR PHASE-CHANGE MEMORY ARRAY Public/Granted day:2019-05-23
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