公开(公告)号：US10416909B2

公开(公告)日：2019-09-17

申请号：US16253087

申请日：2019-01-21

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

Abstract: Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.

公开(公告)号：US11003365B2

公开(公告)日：2021-05-11

申请号：US16555546

申请日：2019-08-29

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

Abstract: Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.

公开(公告)号：US20190391751A1

公开(公告)日：2019-12-26

申请号：US16555546

申请日：2019-08-29

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  G11C13/00 ,  G11C13/02 ,  H01L45/00

Abstract: Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.

公开(公告)号：US10216438B2

公开(公告)日：2019-02-26

申请号：US15827795

申请日：2017-11-30

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

Abstract: Methods of operating memory arrays, as well as the memory arrays, are described. In various embodiments, a method includes determining a pattern to be written to a memory array, the pattern comprising both data hits having sensitive information to be stored and data bits having a state that is unimportant to the sensitive information to be stored, and writing the pattern to the memory array. Other methods of operation and memory devices are also described.

公开(公告)号：US20190155528A1

公开(公告)日：2019-05-23

申请号：US16253087

申请日：2019-01-21

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  G11C13/00 ,  H01L45/00 ,  G11C13/02

CPC classification number: G06F3/0622 ,  G06F3/0643 ,  G06F3/0679 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0059 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/02 ,  H01L45/04 ,  H01L45/06

Abstract: Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.

公开(公告)号：US20180095687A1

公开(公告)日：2018-04-05

申请号：US15827795

申请日：2017-11-30

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G06F3/06 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC classification number: G06F3/0622 ,  G06F3/0643 ,  G06F3/0679 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0059 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/02 ,  H01L45/04 ,  H01L45/06

Abstract: Methods of operating memory arrays, as well as the memory arrays, are described. In various embodiments, a method includes determining a pattern to be written to a memory array, the pattern comprising both data bits having sensitive information to be stored and data bits having a state that is unimportant to the sensitive information to be stored, and writing the pattern to the memory array. Other methods of operation and memory devices are also described.

公开(公告)号：US09851913B2

公开(公告)日：2017-12-26

申请号：US15012478

申请日：2016-02-01

Applicant: Micron Technology, Inc.

Inventor： Ferdinando Bedeschi ,  Claudio Resta ,  Marco Ferraro

IPC: G11C11/00 ,  G06F3/06 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC classification number: G06F3/0622 ,  G06F3/0643 ,  G06F3/0679 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0059 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/02 ,  H01L45/04 ,  H01L45/06

Abstract: Methods of operating memory arrays are described. In various embodiments, a method includes determining a pattern to be written to a memory array, the pattern comprising both data bits having sensitive information to be stored and data bits having a state that is unimportant to the sensitive information to be stored, and writing the pattern to the memory array. Other methods of operation are also described.