Invention Grant
- Patent Title: Structure and method for improving high voltage breakdown reliability of a microelectronic device
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Application No.: US16127275Application Date: 2018-09-11
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Publication No.: US10418320B2Publication Date: 2019-09-17
- Inventor: Jeffrey A. West , Byron Lovell Williams , David Leonard Larkin , Weidong Tian
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L49/02 ; H01L21/768 ; H01L21/02
Abstract:
A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.
Public/Granted literature
- US20190006276A1 STRUCTURE AND METHOD FOR IMPROVING HIGH VOLTAGE BREAKDOWN RELIABILITY OF A MICROELECTRONIC DEVICE Public/Granted day:2019-01-03
Information query
IPC分类:
