公开(公告)号：US20190006276A1

公开(公告)日：2019-01-03

申请号：US16127275

申请日：2018-09-11

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/02 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5222 ,  H01L21/0217 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/62 ,  H01L28/40 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.

公开(公告)号：US10418320B2

公开(公告)日：2019-09-17

申请号：US16127275

申请日：2018-09-11

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02 ,  H01L21/768 ,  H01L21/02

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.

公开(公告)号：US10679935B2

公开(公告)日：2020-06-09

申请号：US16572346

申请日：2019-09-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02 ,  H01L21/768 ,  H01L23/00 ,  H01L21/02

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.

公开(公告)号：US20200013713A1

公开(公告)日：2020-01-09

申请号：US16572346

申请日：2019-09-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/522 ,  H01L21/02 ,  H01L49/02 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.

公开(公告)号：US20180286802A1

公开(公告)日：2018-10-04

申请号：US15478615

申请日：2017-04-04

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L23/5222 ,  H01L21/0217 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53295 ,  H01L28/40

Abstract: A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.

公开(公告)号：US10109574B1

公开(公告)日：2018-10-23

申请号：US15478615

申请日：2017-04-04

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Byron Lovell Williams ,  David Leonard Larkin ,  Weidong Tian

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/02 ,  H01L49/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.