Invention Grant
- Patent Title: Correction for flare effects in lithography system
-
Application No.: US14537441Application Date: 2014-11-10
-
Publication No.: US10423745B2Publication Date: 2019-09-24
- Inventor: Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20

Abstract:
A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.
Public/Granted literature
- US20150058815A1 CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM Public/Granted day:2015-02-26
Information query