公开(公告)号：US20220113638A1

公开(公告)日：2022-04-14

申请号：US17559710

申请日：2021-12-22

申请人： ASML NETHERLANDS B.V.

发明人： Guangqing Chen ,  Wei Liu ,  Maurits Van Der Schaar

IPC分类号： G03F7/20 ,  G01B11/30 ,  G01B11/00

摘要： A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

公开(公告)号：US20160146740A1

公开(公告)日：2016-05-26

申请号：US14945257

申请日：2015-11-18

申请人： ASML NETHERLANDS B.V.

发明人： Yen-Wen Lu ,  Jay Jianhui Chen ,  Wei Liu ,  Boris Menchtchikov ,  Jen-Shiang Wang ,  Te-Chih Huang

IPC分类号： G01N21/88 ,  G01N21/95 ,  G01B11/27

CPC分类号： G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

摘要： A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

摘要翻译： 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。

公开(公告)号：US09903823B2

公开(公告)日：2018-02-27

申请号：US14945257

申请日：2015-11-18

申请人： ASML NETHERLANDS B.V.

发明人： Yen-Wen Lu ,  Jay Jianhui Chen ,  Wei Liu ,  Boris Menchtchikov ,  Jen-Shiang Wang ,  Te-Chih Huang

IPC分类号： G01N21/88 ,  G01B11/27 ,  G03F7/20 ,  G01N21/95

CPC分类号： G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

摘要： A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

公开(公告)号：US11221560B2

公开(公告)日：2022-01-11

申请号：US14577966

申请日：2014-12-19

申请人： ASML NETHERLANDS B.V.

发明人： Guangqing Chen ,  Wei Liu ,  Maurits Van der Schaar

IPC分类号： G03F7/20 ,  G01B11/30 ,  G01B11/00

摘要： A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

公开(公告)号：US10423745B2

公开(公告)日：2019-09-24

申请号：US14537441

申请日：2014-11-10

申请人： ASML NETHERLANDS B.V.

发明人： Hua-Yu Liu ,  Jiangwei Li ,  Luoqi Chen ,  Wei Liu ,  Jiong Jiang

IPC分类号： G06F17/50 ,  G03F7/20

摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

公开(公告)号：US20150058815A1

公开(公告)日：2015-02-26

申请号：US14537441

申请日：2014-11-10

申请人： ASML NETHERLANDS B.V.

发明人： Hua-Yu LIU ,  Jiangwei LI ,  Luoqi CHEN ,  Wei Liu ,  Jiong Jiang

IPC分类号： G06F17/50

摘要： A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

摘要翻译： 描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。 通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响 模拟。 通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。