Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15863009Application Date: 2018-01-05
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Publication No.: US10431603B2Publication Date: 2019-10-01
- Inventor: Hiroshi Hayashi , Tokuaki Kuniyoshi , Yasuhiro Terai , Eri Matsuo , Toshiaki Yoshitani , Naoki Asano
- Applicant: JOLED INC.
- Applicant Address: JP Tokyo
- Assignee: JOLED INC.
- Current Assignee: JOLED INC.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: JP2017-003486 20170112; JP2017-003487 20170112; JP2017-046990 20170313; JP2017-056165 20170322; JP2017-194109 20171004
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L21/027 ; H01L21/768 ; H01L29/66 ; H01L29/417

Abstract:
A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.
Public/Granted literature
- US20180197884A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-07-12
Information query
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