公开(公告)号：US10431603B2

公开(公告)日：2019-10-01

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi Hayashi ,  Tokuaki Kuniyoshi ,  Yasuhiro Terai ,  Eri Matsuo ,  Toshiaki Yoshitani ,  Naoki Asano

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/027 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.