公开(公告)号：US11239371B2

公开(公告)日：2022-02-01

申请号：US16518437

申请日：2019-07-22

Applicant: JOLED INC.

Inventor： Yasuhiro Terai ,  Naoki Asano ,  Takashi Maruyama

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L21/027 ,  H01L21/465

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

公开(公告)号：US11189735B2

公开(公告)日：2021-11-30

申请号：US16736813

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Hiroshi Hayashi ,  Naoki Asano ,  Ryo Koshiishi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

公开(公告)号：US10431603B2

公开(公告)日：2019-10-01

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi Hayashi ,  Tokuaki Kuniyoshi ,  Yasuhiro Terai ,  Eri Matsuo ,  Toshiaki Yoshitani ,  Naoki Asano

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/027 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.