- 专利标题： Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
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申请号： US15467803申请日： 2017-03-23
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公开(公告)号： US10431734B2公开(公告)日： 2019-10-01
- 发明人: Chando Park , Jimmy Jianan Kan , Peiyuan Wang , Seung Hyuk Kang
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Seyfarth Shaw LLP
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/10 ; H01L43/12 ; G11C11/16 ; H01L43/08 ; H01F10/32
摘要：
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.
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