Invention Grant
- Patent Title: Phase change memory in a dual inline memory module
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Application No.: US15392697Application Date: 2016-12-28
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Publication No.: US10437722B2Publication Date: 2019-10-08
- Inventor: Shekoufeh Qawami , Jared E. Hulbert
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F13/00 ; G06F12/0802 ; G11C13/00 ; G11C11/406 ; G11C14/00 ; G06F12/0804 ; G11C11/00
Abstract:
Subject matter disclosed herein relates to management of a memory device.
Public/Granted literature
- US20170177478A1 PHASE CHANGE MEMORY IN A DUAL INLINE MEMORY MODULE Public/Granted day:2017-06-22
Information query
