A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.