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公开(公告)号：US20180202884A1
公开(公告)日：2018-07-19
申请号：US15743678
申请日：2016-07-12
Inventor： Yael Nemirovsky
IPC: G01L11/00
CPC classification number: G01L11/002 , G01L21/12 , G01N27/4077
Abstract: A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.
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公开(公告)号：US11609217B2
公开(公告)日：2023-03-21
申请号：US16948170
申请日：2020-09-04
Inventor： Yael Nemirovsky , Amikam Nemirovsky , Shmuel Melman
Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.
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公开(公告)号：US10768153B2
公开(公告)日：2020-09-08
申请号：US15748723
申请日：2016-08-01
Inventor： Yael Nemirovsky , Amikam Nemirovsky , Shmuel Melman
Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.
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公开(公告)号：US20150372162A1
公开(公告)日：2015-12-24
申请号：US14726536
申请日：2015-05-31
Inventor： Yael Nemirovsky , Yoav Shoham
IPC: H01L31/0232 , H01L31/18 , H01L27/144
CPC classification number: G01J5/045 , G01J5/024 , H01L27/14625 , H01L27/14649 , H01L31/02327
Abstract: A sensing device includes an array of sensing elements. Each sensing element includes a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor. An individual reflector is formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation.
Abstract translation: 感测装置包括感测元件阵列。 每个感测元件包括热红外传感器，其被配置为响应入射在传感器上的红外辐射的强度来输出电信号。 单个反射器与传感器在与红外线辐射的选定波长的距离处与传感器隔开四分之一波长的位置形成一体。
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公开(公告)号：US20220003885A1
公开(公告)日：2022-01-06
申请号：US17305309
申请日：2021-07-02
Inventor： Yael Nemirovsky , Sharon Bar-Lev Shefi , |gor Brouk
IPC: G01T1/24
Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10444078B2
公开(公告)日：2019-10-15
申请号：US15118895
申请日：2015-02-12
Inventor： Yael Nemirovsky
IPC: G01J5/24 , G01J5/20 , H01L27/146 , G01J5/02 , H01L31/028 , H01L31/11
Abstract: A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.
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公开(公告)号：US11550070B2
公开(公告)日：2023-01-10
申请号：US17305309
申请日：2021-07-02
Inventor： Yael Nemirovsky , Sharon Bar-Lev Shefi , Igor Brouk
IPC: G01T1/24
Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.
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公开(公告)号：US10598557B2
公开(公告)日：2020-03-24
申请号：US15743678
申请日：2016-07-12
Inventor： Yael Nemirovsky
IPC: G01L11/00 , G01L21/12 , G01N27/407
Abstract: A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.
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公开(公告)号：US10890555B2
公开(公告)日：2021-01-12
申请号：US16106598
申请日：2018-08-21
Inventor： Yael Nemirovsky
IPC: G01N27/414 , G01J5/04 , H01L27/144 , G01J5/02 , G01J5/06 , G01J5/00 , G01N27/16
Abstract: A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.
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公开(公告)号：US20200292443A1
公开(公告)日：2020-09-17
申请号：US16081953
申请日：2017-03-09
Inventor： Yael Nemirovsky , Amikam NEMIROVSKY
Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral band; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.
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