Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16175776Application Date: 2018-10-30
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Publication No.: US10446448B2Publication Date: 2019-10-15
- Inventor: Chun-Hao Lin , Hsin-Yu Chen , Chun-Tsen Lu , Shou-Wei Hsieh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8234

Abstract:
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; a first oxide layer on the first fin-shaped structure; a second oxide layer on and directly contacting the first oxide layer and the STI; and a third oxide layer on the second fin-shaped structure, wherein a thickness of the third oxide layer is less than a thickness of the first oxide layer.
Public/Granted literature
- US20190067118A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-02-28
Information query
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