Invention Grant
- Patent Title: Endpoint detection algorithm for atomic layer etching (ALE)
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Application No.: US15453555Application Date: 2017-03-08
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Publication No.: US10453653B2Publication Date: 2019-10-22
- Inventor: Yan Chen , Xinkang Tian , Jason Ferns
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3065 ; H01L21/66

Abstract:
Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient signal filtering prior to endpoint determination, which may be implemented through an application of a moving average filter.
Public/Granted literature
- US20180068831A1 ENDPOINT DETECTION ALGORITHM FOR ATOMIC LAYER ETCHING (ALE) Public/Granted day:2018-03-08
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