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公开(公告)号：US20200372629A1
公开(公告)日：2020-11-26
申请号：US16880034
申请日：2020-05-21
Applicant: Tokyo Electron Limited
Inventor： Yan Chen , Xinkang Tian
Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.
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公开(公告)号：US20180068831A1
公开(公告)日：2018-03-08
申请号：US15453555
申请日：2017-03-08
Applicant: Tokyo Electron Limited
Inventor： Yan Chen , Xinkang Tian , Jason Ferns
IPC: H01J37/32
Abstract: Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient signal filtering prior to endpoint determination, which may be implemented through an application of a moving average filter.
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公开(公告)号：US12261030B2
公开(公告)日：2025-03-25
申请号：US18605526
申请日：2024-03-14
Applicant: Tokyo Electron Limited
Inventor： Ching Ling Meng , Holger Tuitje , Qiang Zhao , Hanyou Chu , Xinkang Tian
Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.
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4.发明授权公开(公告)号：US11763161B2
公开(公告)日：2023-09-19
申请号：US16820032
申请日：2020-03-16
Applicant: Tokyo Electron Limited
Inventor： Yan Chen , Xinkang Tian , Zheng Yan
IPC: G01J3/28 , G01J3/02 , G06N20/00 , G06F18/213 , G06F18/214 , G06V10/44 , G06N3/084 , G06N3/08 , G06V10/82
CPC classification number: G06N3/084 , G01J3/0275 , G01J3/2823 , G06F18/213 , G06F18/2148 , G06N3/08 , G06N20/00 , G06V10/454 , G06V10/82
Abstract: A data set is stored in memory circuitry that is indicative of a state of a semiconductor fabrication process or of semiconductor structure fabricated thereby. Features in the data set are discernable to an extent limited by a data resolution. A machine-learning model comprising parameters having respective values assigned thereto as constrained by a model training process is also stored in the memory circuitry. Processor circuitry communicatively coupled to the memory circuitry generates an output data set from the data set in accordance with the machine-learning model such that features in the output data set are discernable to an extent limited by an output data resolution that is finer than the data resolution of the data set.
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5.发明申请公开(公告)号：US20200292388A1
公开(公告)日：2020-09-17
申请号：US16820032
申请日：2020-03-16
Applicant: Tokyo Electron Limited
Inventor： Yan CHEN , Xinkang Tian , Zheng Yan
Abstract: A data set is stored in memory circuitry that is indicative of a state of a semiconductor fabrication process or of semiconductor structure fabricated thereby. Features in the data set are discernable to an extent limited by a data resolution. A machine-learning model comprising parameters having respective values assigned thereto as constrained by a model training process is also stored in the memory circuitry. Processor circuitry communicatively coupled to the memory circuitry generates an output data set from the data set in accordance with the machine-learning model such that features in the output data set are discernable to an extent limited by an output data resolution that is finer than the data resolution of the data set.
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Patent Agency Ranking
公开(公告)号：US10692705B2
公开(公告)日：2020-06-23
申请号：US15351916
申请日：2016-11-15
Applicant: Tokyo Electron Limited
Inventor： Mihail Mihaylov , Xinkang Tian , Ching-Ling Meng , Jason Ferns , Joel Ng , Badru D. Hyatt , Zheng Yan , Vi Vuong
Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
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公开(公告)号：US10345246B2
公开(公告)日：2019-07-09
申请号：US15611290
申请日：2017-06-01
Applicant: Tokyo Electron Limited
Inventor： Xinkang Tian , Ching-Ling Meng , Yan Sun
Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.
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公开(公告)号：US20180286643A1
公开(公告)日：2018-10-04
申请号：US15472494
申请日：2017-03-29
Applicant: Tokyo Electron Limited
Inventor： Holger TUITJE , Xinkang Tian , Ching-Ling Meng , Vi Vuong , Wen Jin , Zheng Yan , Mihail Mihaylov
Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.
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公开(公告)号：US20250164410A1
公开(公告)日：2025-05-22
申请号：US18517486
申请日：2023-11-22
Applicant: Tokyo Electron Limited
Inventor： Holger Tuitje , Xinkang Tian , Ching Ling Meng
IPC: G01N21/95 , G01N21/93 , G01N21/956 , H01L21/66
Abstract: A method for monitoring a plurality of process chambers, the method includes generating an optical beam at a light source. The method further includes dividing the optical beam into a plurality of light beams. The method further includes providing the plurality of light beams to the plurality of process chambers. And the method further includes measuring the plurality of light beams after being reflected within the plurality of process chambers.
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公开(公告)号：US11538722B2
公开(公告)日：2022-12-27
申请号：US16880034
申请日：2020-05-21
Applicant: Tokyo Electron Limited
Inventor： Yan Chen , Xinkang Tian
IPC: G01J3/28 , H01L21/66 , G01N21/71 , G01N21/95 , G01N21/88 , H01J37/32 , H01L21/3065 , G06T7/00 , G01N21/84
Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.
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