Invention Grant
- Patent Title: Apparatus for depositing metal films with plasma treatment
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Application No.: US15642002Application Date: 2017-07-05
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Publication No.: US10453657B2Publication Date: 2019-10-22
- Inventor: Daping Yao , Hyman W. H. Lam , John C. Forster , Jiang Lu , Can Xu , Dien-Yeh Wu , Paul F. Ma , Mei Chang
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/513 ; C23C16/505 ; C23C16/52 ; C23C16/455 ; C23C16/509 ; C23C16/06

Abstract:
Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
Public/Granted literature
- US20180012732A1 APPARATUS FOR DEPOSITING METAL FILMS WITH PLASMA TREATMENT Public/Granted day:2018-01-11
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