公开(公告)号：US11887818B2

公开(公告)日：2024-01-30

申请号：US17498231

申请日：2021-10-11

申请人： Applied Materials, Inc.

发明人： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC分类号： H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  C23C16/505

CPC分类号： H01J37/32449 ,  C23C16/345 ,  C23C16/401 ,  C23C16/458 ,  C23C16/4554 ,  C23C16/4583 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32082

摘要： Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20220415637A1

公开(公告)日：2022-12-29

申请号：US17861421

申请日：2022-07-11

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/34 ,  C23C14/54 ,  H01J37/32 ,  C23C14/56

摘要： A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US11158489B2

公开(公告)日：2021-10-26

申请号：US15805466

申请日：2017-11-07

申请人： Applied Materials, Inc.

发明人： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC分类号： H01J37/00 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  C23C16/505

摘要： Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US11081318B2

公开(公告)日：2021-08-03

申请号：US16220833

申请日：2018-12-14

申请人： Applied Materials, Inc.

发明人： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC分类号： H01L21/31 ,  H01J37/32 ,  C23C16/507 ,  C23C16/455 ,  C23C16/56

摘要： Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US20210166923A1

公开(公告)日：2021-06-03

申请号：US17150702

申请日：2021-01-15

申请人： Applied Materials, Inc.

发明人： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

摘要： Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10903056B2

公开(公告)日：2021-01-26

申请号：US15980158

申请日：2018-05-15

申请人： Applied Materials, Inc.

发明人： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C16/50 ,  C23C16/455 ,  C23C16/509 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/40

摘要： Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10593521B2

公开(公告)日：2020-03-17

申请号：US13798028

申请日：2013-03-12

申请人： APPLIED MATERIALS, INC.

发明人： Larry Frazier ,  Cheng-Hsiung Matthew Tsai ,  John C. Forster ,  Mei Po Yeung ,  Michael S. Jackson

IPC分类号： H01L21/67 ,  H01L21/687 ,  H01J37/32

摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

公开(公告)号：US20140196746A1

公开(公告)日：2014-07-17

申请号：US13743646

申请日：2013-01-17

申请人： Applied Materials, Inc.

发明人： Robert Dinsmore ,  John C. Forster ,  Song-Moon Sun ,  Cheng-Hsiung Tsai ,  Glen T. Mori

IPC分类号： H01L21/02

CPC分类号： H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/1134 ,  H01L2924/00014

摘要： Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

摘要翻译： 本发明的实施例一般涉及在衬底处理期间清洁处理室的方法。 在第一基板处理步骤期间，在处理室中由氩，氦和氢的气体混合物形成等离子体。 在第二基板处理步骤中，在处理室中形成氩等离子体。

公开(公告)号：US12100576B2

公开(公告)日：2024-09-24

申请号：US16863541

申请日：2020-04-30

申请人： APPLIED MATERIALS, INC.

发明人： Andrew Nguyen ,  Xue Yang Chang ,  Yu Lei ,  Xianmin Tang ,  John C. Forster ,  Yogananda Sarode Vishwanath ,  Abilash Sainath ,  Tza-Jing Gung

IPC分类号： H01J37/32 ,  C23C16/44

CPC分类号： H01J37/32477 ,  C23C16/4412 ,  H01J37/3244 ,  H01J37/32495 ,  H01J37/32633 ,  H01J37/32651

摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.

公开(公告)号：US11915918B2

公开(公告)日：2024-02-27

申请号：US17362925

申请日：2021-06-29

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/34 ,  C23C14/56 ,  H01J37/32 ,  C23C14/54

CPC分类号： H01J37/3488 ,  C23C14/54 ,  C23C14/564 ,  H01J37/32357 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/32091

摘要： A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.