Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15160137Application Date: 2016-05-20
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Publication No.: US10453745B2Publication Date: 2019-10-22
- Inventor: Ji-Hoon Choi , Jung Ho Kim , Dongkyum Kim , Seulye Kim , Jintae Noh , Hyun-Jin Shin , SeungHyun Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0106278 20150728
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/115 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L27/11582 ; H01L21/28

Abstract:
A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
Public/Granted literature
- US20170033044A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-02-02
Information query
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