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公开(公告)号：US09893082B2
公开(公告)日：2018-02-13
申请号：US15250091
申请日：2016-08-29
发明人： Chaeho Kim , Sangryol Yang , Woong Lee , SeungHyun Lim
IPC分类号： H01L27/115 , H01L29/423 , H01L27/11582 , H01L27/11573 , H01L29/51 , H01L27/11575 , H01L27/11565
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L29/42348 , H01L29/513
摘要： A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.
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2.发明申请公开(公告)号：US20140099761A1
公开(公告)日：2014-04-10
申请号：US14061304
申请日：2013-10-23
发明人： Bio Kim , Kihyun Hwang , Jaeyoung Ahn , SeungHyun Lim , Dongwoo Kim
IPC分类号： H01L29/66 , H01L27/115
CPC分类号： H01L29/66666 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
摘要翻译： 提供三维半导体存储器件及其形成方法。 该器件包括衬底，堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。 有源图案可以包括设置在有源图案的上部的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。 扩散阻止掺杂区域可以是掺杂有碳的区域。
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公开(公告)号：US10453745B2
公开(公告)日：2019-10-22
申请号：US15160137
申请日：2016-05-20
发明人： Ji-Hoon Choi , Jung Ho Kim , Dongkyum Kim , Seulye Kim , Jintae Noh , Hyun-Jin Shin , SeungHyun Lim
IPC分类号： H01L23/522 , H01L27/115 , H01L23/528 , H01L23/532 , H01L21/768 , H01L27/11582 , H01L21/28
摘要： A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
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公开(公告)号：US09960182B2
公开(公告)日：2018-05-01
申请号：US15634555
申请日：2017-06-27
发明人： Ji-Hoon Choi , SeungHyun Lim , Sunggil Kim , HongSuk Kim , Hunhyeong Lim , Hyunjun Sim
IPC分类号： H01L27/115 , H01L29/10 , H01L27/11582 , H01L27/11565 , H01L27/1157
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157
摘要： A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.
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5.发明授权公开(公告)号：US08765538B2
公开(公告)日：2014-07-01
申请号：US14061304
申请日：2013-10-23
发明人： Bio Kim , Kihyun Hwang , Jaeyoung Ahn , SeungHyun Lim , Dongwoo Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66666 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
摘要翻译： 提供三维半导体存储器件及其形成方法。 该器件包括衬底，堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。 有源图案可以包括设置在有源图案的上部的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。 扩散阻止掺杂区域可以是掺杂有碳的区域。
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