Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15689418Application Date: 2017-08-29
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Publication No.: US10453838B2Publication Date: 2019-10-22
- Inventor: Hwichan Jun , Deokhan Bae , HeonJong Shin , Jaeran Jang , Moon Gi Cho , YoungWoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0149081 20161109
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/522 ; H01L29/06 ; H01L49/02 ; H01L29/78 ; H01L21/3213 ; H01L23/532

Abstract:
A semiconductor device includes a substrate including a first region and a second region, a cell gate pattern on the first region of the substrate, a dummy gate pattern on the second region of the substrate, a resistor pattern on the second region of the substrate and over the dummy gate pattern, and a connection structure coupled to each of the connection regions. The resistor pattern includes a body region and connection regions at both sides of the body region. The dummy gate pattern overlaps the body region and does not be overlap the connection regions, when viewed in a plan view.
Public/Granted literature
- US20180130796A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-10
Information query
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