Invention Grant
- Patent Title: Bad column handling in flash memory
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Application No.: US15709769Application Date: 2017-09-20
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Publication No.: US10459787B2Publication Date: 2019-10-29
- Inventor: Damian Yurzola , Eran Sharon , Idan Alrod , Michael Altshuler , Madhuri Kotagiri , Rajeev Nagabhirava
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Foley & Lardner LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52
Abstract:
In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.
Public/Granted literature
- US20180024880A1 BAD COLUMN HANDLING IN FLASH MEMORY Public/Granted day:2018-01-25
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