公开(公告)号：US20180024880A1

公开(公告)日：2018-01-25

申请号：US15709769

申请日：2017-09-20

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Damian Yurzola ,  Eran Sharon ,  Idan Alrod ,  Michael Altshuler ,  Madhuri Kotagiri ,  Rajeev Nagabhirava

IPC: G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1012 ,  G11C29/52

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

公开(公告)号：US10459787B2

公开(公告)日：2019-10-29

申请号：US15709769

申请日：2017-09-20

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Damian Yurzola ,  Eran Sharon ,  Idan Alrod ,  Michael Altshuler ,  Madhuri Kotagiri ,  Rajeev Nagabhirava

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

公开(公告)号：US09792174B2

公开(公告)日：2017-10-17

申请号：US14841317

申请日：2015-08-31

Applicant: SanDisk Technologies LLC

Inventor： Damian Pablo Yurzola ,  Eran Sharon ,  Idan Alrod ,  Michael Altshuler ,  Madhuri Kotagiri ,  Rajeev Nagabhirava

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1012 ,  G11C29/52

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.