- 专利标题： Method for forming semiconductor device structure with overlay grating
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申请号： US15797953申请日： 2017-10-30
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公开(公告)号： US10461037B2公开(公告)日： 2019-10-29
- 发明人: Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/768 ; H01L21/67 ; H01L21/66 ; H01L21/033 ; G03F9/00 ; G03F7/20
摘要：
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.
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