- Patent Title: Substrate technology for quantum dot lasers integrated on silicon
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Application No.: US15910852Application Date: 2018-03-02
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Publication No.: US10461495B2Publication Date: 2019-10-29
- Inventor: Dominic F. Siriani , Sean P. Anderson , Vipulkumar Patel
- Applicant: Cisco Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Cisco Technology, Inc.
- Current Assignee: Cisco Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/02 ; H01S5/323 ; H01S5/20 ; H01S5/30 ; H01S5/34 ; H01S5/343
Abstract:
A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.
Public/Granted literature
- US20190273361A1 SUBSTRATE TECHNOLOGY FOR QUANTUM DOT LASERS INTEGRATED ON SILICON Public/Granted day:2019-09-05
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