公开(公告)号：US20140270620A1

公开(公告)日：2014-09-18

申请号：US13828455

申请日：2013-03-14

申请人： CISCO TECHNOLOGY, INC.

发明人： Sean P. Anderson ,  Mark A. Webster

IPC分类号： G02B6/27

CPC分类号： G02B6/27 ,  G02B6/126 ,  G02B6/2706 ,  G02B6/2766 ,  G02B6/2773

摘要： An optical waveguide structure includes a rotator having a dual-layer core. A first layer of the dual-layer core may include a tapering portion. A second layer of the dual-layer core may include a rib portion disposed on the tapering portion. The combination of the rib portion and the tapering portion may receive a pair of optical signals, one being polarized in a TE mode and the other being polarized in a TM mode, and convert them to a pair of TE mode optical signals.

摘要翻译： 光波导结构包括具有双层芯的旋转器。 双层芯的第一层可以包括锥形部分。 双层芯的第二层可以包括设置在锥形部分上的肋部分。 肋部分和锥形部分的组合可以接收一对光信号，一个在TE模式下极化，另一个在TM模式下极化，并将它们转换成一对TE模式光信号。

公开(公告)号：US10686527B2

公开(公告)日：2020-06-16

申请号：US16700722

申请日：2019-12-02

申请人： Cisco Technology, Inc.

发明人： Sean P. Anderson ,  Mark A. Webster

IPC分类号： H04B10/50 ,  G02F1/225 ,  H04B10/073 ,  H04B10/54 ,  G02F1/313 ,  H04Q11/00

摘要： Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

公开(公告)号：US10461495B2

公开(公告)日：2019-10-29

申请号：US15910852

申请日：2018-03-02

申请人： Cisco Technology, Inc.

发明人： Dominic F. Siriani ,  Sean P. Anderson ,  Vipulkumar Patel

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343

摘要： A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.

公开(公告)号：US10298357B2

公开(公告)日：2019-05-21

申请号：US15637905

申请日：2017-06-29

申请人： Cisco Technology, Inc.

发明人： Sean P. Anderson

IPC分类号： G02B6/126 ,  H04J14/02 ,  H04J14/06

摘要： The present disclosure discloses a photonic chip. The photonic chip receives a first optical signal and a second optical signal with different wavelengths from two optical sources, respectively. The photonic chip includes a polarization multiplexing element (PME). The PME receives the first and the second optical signals from the first and the second optical sources respectively and combines the first and the second optical signals into a single optical path. The PME polarizes the first optical signal to have a different polarization than the second optical signal and transmits the combined first and the second optical signals in a common waveguide.

公开(公告)号：US11675127B2

公开(公告)日：2023-06-13

申请号：US17305931

申请日：2021-07-16

申请人： Cisco Technology, Inc.

发明人： Sean P. Anderson ,  Vipulkumar Patel

IPC分类号： G02B6/12 ,  G02B6/122 ,  H01L31/0232 ,  H01L31/105

CPC分类号： G02B6/12002 ,  G02B6/12004 ,  G02B6/1228 ,  H01L31/02327 ,  H01L31/105 ,  G02B2006/12123

摘要： Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.

公开(公告)号：US11183603B2

公开(公告)日：2021-11-23

申请号：US16550054

申请日：2019-08-23

申请人： Cisco Technology, Inc.

发明人： Igal I. Bayn ,  Sean P. Anderson

IPC分类号： H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/02 ,  G01S7/4913 ,  H01L31/024 ,  H01L31/0224 ,  H01L31/103 ,  G02B6/42 ,  G02B6/12

摘要： Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

公开(公告)号：US10734785B2

公开(公告)日：2020-08-04

申请号：US15910684

申请日：2018-03-02

申请人： Cisco Technology, Inc.

发明人： Dominic F. Siriani ,  Sean P. Anderson ,  Vipulkumar Patel

IPC分类号： H01S5/026 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/022 ,  H01L21/02 ,  H01S5/34 ,  H01S5/125 ,  H01S5/22 ,  H01S5/10

摘要： An apparatus, comprising: a silicon substrate; and a quantum dot laser comprising: a base layer of a III-V semiconductor material, bonded with the silicon substrate; and at least one layer grown epitaxially from the base layer, wherein the at least one layer comprises a quantum dot layer. The apparatus further comprises a photonic element, fabricated on the silicon substrate and including a waveguide optically aligned with the quantum dot layer.

公开(公告)号：US10446699B2

公开(公告)日：2019-10-15

申请号：US15663556

申请日：2017-07-28

申请人： Cisco Technology, Inc.

发明人： Igal I. Bayn ,  Sean P. Anderson

IPC分类号： H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/02 ,  G01S7/491 ,  G02B6/42 ,  H01L31/0224 ,  H01L31/024 ,  H01L31/103

摘要： Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

公开(公告)号：US20190273364A1

公开(公告)日：2019-09-05

申请号：US15910345

申请日：2018-03-02

申请人： Cisco Technology, Inc.

发明人： Dominic F. Siriani ,  Sean P. Anderson ,  Vipulkumar Patel

IPC分类号： H01S5/343 ,  H01L21/68 ,  H01S5/02

摘要： A wafer comprising: a silicon substrate; a base layer of a predetermined thickness of a III-V semiconductor material bonded with the silicon substrate; and at least one layer grown on the base layer to form a plurality of quantum dot lasers.

公开(公告)号：US09978890B1

公开(公告)日：2018-05-22

申请号：US15440209

申请日：2017-02-23

申请人： Cisco Technology, Inc.

发明人： Igal I. Bayn ,  Vipulkumar Patel ,  Sean P. Anderson ,  Prakash Gothoskar

IPC分类号： H01L31/00 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/0352 ,  G02B6/125 ,  G02B6/12

CPC分类号： G02B6/12 ,  G02B6/125 ,  G02B2006/12061 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105

摘要： Embodiments herein describe a photonic device that includes a germanium photodetector coupled to multiple silicon waveguides. In one embodiment, the silicon waveguides optically couple to a layer of germanium material. In one embodiment, if the germanium material forms a polygon, then a respective silicon waveguide optically couple to each of the corners of the polygon. Each of the plurality of input silicon waveguides may be arranged to transmit light in a direction under the germanium that is offset relative to both sides of the germanium forming the respective corner. In another example, the germanium material may be a circle or ellipse in which case the silicon waveguides terminate at or close to a non-straight, curved surface of the germanium material. As described below, optically coupling the silicon waveguides at a non-straight surface can reduce the distance charge carriers have to travel in the optical detector which can improve bandwidth.