- 专利标题： Pixel structure of image sensor and method of forming same
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申请号： US16223247申请日： 2018-12-18
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公开(公告)号： US10468443B2公开(公告)日： 2019-11-05
- 发明人: Tzu-Jui Wang , Keng-Yu Chou , Chun-Hao Chuang , Ming-Chieh Hsu , Ren-Jie Lin , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/146 ; H01L31/0232
摘要：
A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.
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