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    IMAGE SENSOR WITH PHOTOSENSITIVITY ENHANCEMENT REGION
    1.
    发明公开
    IMAGE SENSOR WITH PHOTOSENSITIVITY ENHANCEMENT REGION 审中-公开

    公开(公告)号：US20240363653A1

    公开(公告)日：2024-10-31

    申请号：US18765738

    申请日：2024-07-08

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Tzu-Jui Wang ,  Yuichiro Yamashita

    IPC分类号： H01L27/146 ,  H01L31/107

    CPC分类号： H01L27/1461 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/107

    摘要： The present disclosure relates to an image sensor including a pixel along a substrate. The pixel includes a first semiconductor region having a first doping type. A second semiconductor region is directly over the first semiconductor region. The second semiconductor region has a second doping type opposite the first doping type and meets the first semiconductor region at a p-n junction. A ring-shaped third semiconductor region laterally surrounds the first and second semiconductor regions. The ring-shaped third semiconductor region has the first doping type. A ring-shaped fourth semiconductor region laterally surrounds the ring-shaped third semiconductor region. The ring-shaped fourth semiconductor region has the second doping type. A ring-shaped fifth semiconductor region is directly over the ring-shaped third semiconductor region and has the second doping type.

    PIXEL WITH DUAL-PD LAYOUT
    3.
    发明公开
    PIXEL WITH DUAL-PD LAYOUT 审中-公开

    公开(公告)号：US20240290810A1

    公开(公告)日：2024-08-29

    申请号：US18324415

    申请日：2023-05-26

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chi-Hsien Chung ,  Tzu-Jui Wang ,  Chia-Chi Hsiao ,  Chen-Jong Wang ,  Dun-Nian Yaung

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14634 ,  H01L27/14643 ,  H01L27/1469 ,  H01L27/14605 ,  H01L27/1463

    摘要： Various embodiments of the present disclosure are directed towards an image sensor comprising a pixel with a dual-PD layout for enhanced scaling down. The pixel spans a first integrated circuit (IC) die and a second IC die stacked with the first IC die. The pixel comprises a plurality of photodetectors in the first IC die, and further comprises a plurality of pixel transistors split amongst the first IC die and the second IC die. The plurality of photodetectors are grouped into one or more pairs, each having the dual-PD layout. A DTI structure completely and individually surrounds the plurality of photodetectors, and further extends completely through a substrate within which the plurality of photodetectors are arranged. As such, the DTI structure completely separates the plurality of photodetectors from each other.

    HIGH-SPEED READOUT IMAGE SENSOR
    4.
    发明公开
    HIGH-SPEED READOUT IMAGE SENSOR 审中-公开

    公开(公告)号：US20240014245A1

    公开(公告)日：2024-01-11

    申请号：US18149746

    申请日：2023-01-04

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chi-Hsien Chung ,  Tzu-Jui Wang ,  Shang-Fu Yeh ,  Tzu-Hsuan Hsu ,  Chen-Jong Wang ,  Dun-Nian Yaung

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14636 ,  H01L27/14634

    摘要： Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first chip bonded to a second chip. The first chip includes a semiconductor substrate. The first chip includes a first transistor cell and a second transistor cell. The second transistor cell is laterally spaced from the first transistor cell. A first through-substrate via (TSV) extends vertically through the semiconductor substrate. The first transistor cell is electrically coupled to the first TSV. A second TSV extends vertically through the first semiconductor substrate. The second transistor cell is electrically coupled to the second TSV. The second chip comprises a first readout circuit that is electrically coupled to the first TSV and the second TSV. The first readout circuit is disposed laterally between the first TSV and the second TSV. The first readout circuit is configured to receive a first signal from the first transistor cell.

    Structure and Method for Backside-Illuminated Image Device
    5.
    发明公开
    Structure and Method for Backside-Illuminated Image Device 审中-公开

    公开(公告)号：US20230317760A1

    公开(公告)日：2023-10-05

    申请号：US17879536

    申请日：2022-08-02

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Hao-Lin Yang ,  Ching-Chun Wang ,  Tzu-Jui Wang ,  Chen-Jong Wang ,  Dun-Nian Yaung

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1464 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor structure that further includes a first substrate having a front side and a back side; a photodetector disposed on the front side of the first substrate and spanning a dimension Dp along a first direction; a gate electrode formed on the front side of the first substrate and partially overlapping the photodetector; a doped region as a floating diffusion region formed on the front side of the first substrate and disposed next to the photodetector; and an interconnect structure disposed on the front surface of the first substrate and overlying the gate electrode. The interconnect structure includes a second metal layer over a first metal layer, the second metal layer further includes a first and second metal features distanced a distance Ds along the first direction, the first metal feature is electrically connected to the doped feature, and a first ratio Ds/Dp is greater than 0.3.