A trench gate lead-out structure comprises a substrate (10), a trench formed in the surface of the substrate (10) and a first dielectric layer (22) on the substrate (10), and also comprises a polysilicon gate (31) at the inner surface of the trench. The trench is partially filled by the polysilicon gate (31), so that a recess exists in the trench above the polysilicon gate (31). A second dielectric layer (41) is filled in the recess. The trench gate lead-out structure also comprises a metal plug (50). The metal plug (50) downwards penetrates through the first dielectric layer (22) and then is inserted between the second dielectric layer (41) and the polysilicon gate (31), and accordingly is connected to the polysilicon gate (31).