- 专利标题： Magnetoresistive stacks and methods therefor
-
申请号： US15957333申请日： 2018-04-19
-
公开(公告)号： US10475986B1公开(公告)日： 2019-11-12
- 发明人: Jijun Sun
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： EVERSPIN TECHNOLOGIES, INC.
- 当前专利权人： EVERSPIN TECHNOLOGIES, INC.
- 当前专利权人地址： US AZ Chandler
- 代理机构： Bookoff McAndrews, PLLC
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/10 ; H01L43/12 ; G11C11/16 ; H01F41/32 ; H01F10/32
摘要：
A magnetoresistive device includes first and second ferromagnetic regions and an intermediate region formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate region at an interface between the intermediate region and at least one of the first and second ferromagnetic regions may be a plasma treated surface.
公开/授权文献
- US20190326506A1 MAGNETORESISTIVE STACKS AND METHODS THEREFOR 公开/授权日：2019-10-24