公开(公告)号：US10347828B2

公开(公告)日：2019-07-09

申请号：US16230031

申请日：2018-12-21

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

IPC分类号： H01L27/108 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US20180226574A1

公开(公告)日：2018-08-09

申请号：US15941153

申请日：2018-03-30

申请人： Everspin Technologies, Inc.

发明人： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

IPC分类号： H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US11004899B2

公开(公告)日：2021-05-11

申请号：US16395396

申请日：2019-04-26

申请人： Everspin Technologies, Inc.

发明人： Sanjeev Aggarwal ,  Jijun Sun

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region. The intermediate region may be formed of a dielectric material and comprise at least two different metal oxides.

公开(公告)号：US20150357560A1

公开(公告)日：2015-12-10

申请号：US14298085

申请日：2014-06-06

申请人： Everspin Technologies, Inc.

发明人： Chaitanya Mudivarthi ,  Jason Allen Janesky ,  Jijun Sun ,  Frederick Bennett Mancoff ,  Sanjeev Aggarwal

IPC分类号： H01L43/12

CPC分类号： H01J43/12 ,  H01L43/12

摘要： The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

摘要翻译： 通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。 通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。 这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

公开(公告)号：US11637235B2

公开(公告)日：2023-04-25

申请号：US16744963

申请日：2020-01-16

申请人： Everspin Technologies, Inc.

发明人： Sumio Ikegawa ,  Han Kyu Lee ,  Sanjeev Aggarwal ,  Jijun Sun ,  Syed M. Alam ,  Thomas Andre

IPC分类号： H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01L27/22

摘要： The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US10811597B2

公开(公告)日：2020-10-20

申请号：US16411194

申请日：2019-05-14

申请人： Everspin Technologies, Inc.

发明人： Jijun Sun

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01F10/32 ,  H01F41/30 ,  G11C11/16 ,  H01L43/12

摘要： A magnetoresistive device with a magnetically fixed region having at least two ferromagnetic regions coupled together by an antiferromagnetic coupling region. At least one of the two ferromagnetic regions includes multiple alternating metal layers and magnetic layers and one or more interfacial layers. Wherein, each metal layer includes at least one of platinum, palladium, nickel, or gold, and the interfacial layers include at least one of an oxide, iron, or an alloy including cobalt and iron.

公开(公告)号：US10475986B1

公开(公告)日：2019-11-12

申请号：US15957333

申请日：2018-04-19

申请人： Everspin Technologies, Inc.

发明人： Jijun Sun

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01F41/32 ,  H01F10/32

摘要： A magnetoresistive device includes first and second ferromagnetic regions and an intermediate region formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate region at an interface between the intermediate region and at least one of the first and second ferromagnetic regions may be a plasma treated surface.

公开(公告)号：US09419208B2

公开(公告)日：2016-08-16

申请号：US15046483

申请日：2016-02-18

申请人： Everspin Technologies, Inc.

发明人： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

摘要翻译： 磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。 第一电介质的第一表面与自由磁性层的第一表面接触。 磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。 电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料 电极和导体。

公开(公告)号：US09281168B2

公开(公告)日：2016-03-08

申请号：US14298085

申请日：2014-06-06

申请人： Everspin Technologies, Inc.

发明人： Chaitanya Mudivarthi ,  Jason Allen Janesky ,  Jijun Sun ,  Frederick Bennett Mancoff ,  Sanjeev Aggarwal

IPC分类号： H01L27/11 ,  H01L27/22 ,  H01J43/12

CPC分类号： H01J43/12 ,  H01L43/12

摘要： The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

摘要翻译： 通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。 通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。 这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

公开(公告)号：US11088318B2

公开(公告)日：2021-08-10

申请号：US16376644

申请日：2019-04-05

申请人： Everspin Technologies, Inc.

发明人： Jijun Sun

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

摘要： Spin-orbit-torque (SOT) lines are provided near free regions in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT lines injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from a SOT switching line can be used to switching the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional layers or regions may improve the SOT switching efficiency and the thermal stability of magnetoresistive devices including SOT lines.