Invention Grant
- Patent Title: Tip-contact controlled three dimensional (3D) vertical self select memory
-
Application No.: US15853697Application Date: 2017-12-22
-
Publication No.: US10475995B2Publication Date: 2019-11-12
- Inventor: Paolo Fantini
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law, PC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24 ; B82Y40/00 ; B82Y35/00
Abstract:
A variable resistance memory cell with a wide difference (“window”) between threshold voltages is provided. The window between threshold voltages is increased by amplifying the stoichiometry gradient by means of an asymmetry in the memory cell architecture to provide a greater margin for detecting different logic states of the memory cell.
Public/Granted literature
- US20190044062A1 TIP-CONTACT CONTROLLED THREE DIMENSIONAL (3D) VERTICAL SELF SELECT MEMORY Public/Granted day:2019-02-07
Information query
IPC分类:
