Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16128554Application Date: 2018-09-12
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Publication No.: US10482941B2Publication Date: 2019-11-19
- Inventor: Takuya Shimada , Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2018-047148 20180314
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01F10/32 ; H01L43/02 ; G11C11/02

Abstract:
According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
Public/Granted literature
- US20190287598A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-09-19
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