Invention Grant
- Patent Title: Metallic spin super lattice for logic and memory devices
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Application No.: US15569978Application Date: 2015-06-24
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Publication No.: US10483026B2Publication Date: 2019-11-19
- Inventor: Sasikanth Manipatruni , Anurag Chaudhry , Dmitri E. Nikonov , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2015/037445 WO 20150624
- International Announcement: WO2016/209226 WO 20161229
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01F10/32 ; H01L43/10 ; H01L43/08 ; H03K19/16 ; G11C11/16 ; G11C11/155 ; H03K19/18 ; H01F10/26
Abstract:
Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.
Public/Granted literature
- US20180158588A1 METALLIC SPIN SUPER LATTICE FOR LOGIC AND MEMORY DEVICES Public/Granted day:2018-06-07
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