- 专利标题： Semiconductor structure and method for manufacturing the same
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申请号： US16171700申请日： 2018-10-26
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公开(公告)号： US10483201B1公开(公告)日： 2019-11-19
- 发明人: Ping Hsu
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L23/525 ; H01L29/06 ; H01H85/08 ; H01L21/768 ; H01L21/02
摘要：
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a semiconductor layer, a first conductor, a second conductor and a fuse. The first conductor is disposed over the semiconductor layer. The second conductor is disposed over the first conductor. The fuse is disposed between the first conductor and the second conductor, wherein the fuse includes a conductive portion and a non-conductive portion surrounded by the conductive portion, the conductive portion is in contact with the first conductor and the second conductor, and the non-conductive portion is in contact with the second conductor.
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