Invention Grant
- Patent Title: Power semiconductor module
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Application No.: US14878466Application Date: 2015-10-08
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Publication No.: US10483244B2Publication Date: 2019-11-19
- Inventor: Samuel Hartmann , Franc Dugal , Olle Ekwall , Erik Doré
- Applicant: ABB Schweiz AG
- Applicant Address: CH Baden
- Assignee: ABB Schweiz AG
- Current Assignee: ABB Schweiz AG
- Current Assignee Address: CH Baden
- Agency: Whitmyer IP Group LLC
- Priority: EP13162942 20130409
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/051 ; H01L23/492

Abstract:
A power semiconductor module includes a first main electrode, a second main electrode and a control terminal. The power semiconductor module includes controllable power semiconductor components arranged between the first main electrode and the second main electrode. At least some of the controllable power semiconductor components are arranged in a ring arrangement, wherein the controllable power semiconductor components of the ring arrangement are arranged at least approximately along a first circular line of the ring arrangement, and a control conductor track of the ring arrangement is arranged on the first main electrode, wherein the control conductor track runs at least approximately along a second circular line of the ring arrangement, and the second circular line runs concentrically relative to the first circular line.
Public/Granted literature
- US20160027762A1 Power Semiconductor Module Public/Granted day:2016-01-28
Information query
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