Invention Grant
- Patent Title: Sensor in an internet-of-things and manufacturing method of the same
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Application No.: US14879018Application Date: 2015-10-08
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Publication No.: US10508345B2Publication Date: 2019-12-17
- Inventor: Ming-Ta Lei , Chia-Hua Chu , Hsin-Chih Chiang , Tung-Tsun Chen , Chun-Wen Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: C23F4/00
- IPC: C23F4/00

Abstract:
Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.
Public/Granted literature
- US20170102353A1 SENSOR IN AN INTERNET-OF-THINGS AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-04-13
Information query
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